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BLS6G3135S-120

Ampleon
Part Number BLS6G3135S-120
Manufacturer Ampleon
Description LDMOS S-Band radar power transistor
Published Apr 26, 2018
Detailed Description BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 3 — 1 September 2015 Product data sheet 1. Prod...
Datasheet PDF File BLS6G3135S-120 PDF File

BLS6G3135S-120
BLS6G3135S-120

Overview
BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev.
3 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description 120 W LDMOS power transistor intended for radar applications in the 3.
1 GHz to 3.
5 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 3.
1 to 3.
5 32 120 11 43 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features  Typical pulsed RF performance at a frequency of 3.
1 GHz to 3.
5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 s with  of 10 %:  Output power = 120 W  Gain = 11 dB  Efficiency = 43 %  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency ...


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