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BLS7G2729LS-350P

Ampleon
Part Number BLS7G2729LS-350P
Manufacturer Ampleon
Description LDMOS S-band radar power transistor
Published Apr 26, 2018
Detailed Description BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 6 — 1 September 2015 Product data sheet 1. ...
Datasheet PDF File BLS7G2729LS-350P PDF File

BLS7G2729LS-350P
BLS7G2729LS-350P

Overview
BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev.
6 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.
7 GHz to 2.
9 GHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circuit.
Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 2.
7 to 2.
9 32 350 13 50 8 5 1.
2 Features and benefits  High efficiency  Excellent ruggedness  Designed for S-band operation (2.
7 GHz to 2.
9 GHz)  Excellent thermal stability  Easy power con...


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