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BLC8G20LS-310AV

Part Number	BLC8G20LS-310AV
Manufacturer	Ampleon
Description	Power LDMOS transistor
Published	Apr 26, 2018
Detailed Description	BLC8G20LS-310AV Power LDMOS transistor Rev. 5 — 24 November 2017 Product data sheet 1. Product profile 1.1 General de...
Datasheet	BLC8G20LS-310AV PDF File

Overview

BLC8G20LS-310AV Power LDMOS transistor Rev.
5 — 24 November 2017 Product data sheet 1.
Product profile 1.
1 General description 310 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1900 MHz to 2000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.
VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.
5 V, unless otherwise specified.
Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (dBm) (dB) (%) (dBc) 1-carrier W-CDMA 1930 to 1995 28 47.
5 17 42.
5 33 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.
65 dB at 0.
01% probability...

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BLC8G20LS-310AV Power LDMOS transistor - Ampleon

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