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BLC8G27LS-240AV

Part Number	BLC8G27LS-240AV
Manufacturer	Ampleon
Description	Power LDMOS transistor
Published	Apr 26, 2018
Detailed Description	BLC8G27LS-240AV Power LDMOS transistor Rev. 5 — 2 December 2016 Product data sheet 1. Product profile 1.1 General des...
Datasheet	BLC8G27LS-240AV PDF File

Overview

BLC8G27LS-240AV Power LDMOS transistor Rev.
5 — 2 December 2016 Product data sheet 1.
Product profile 1.
1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo board.
VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.
5 V, unless otherwise specified.
Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 2500 to 2690 28 56 14.
5 43 35 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.
2 dB at 0.
01% probability on CCDF per carrier.
1.
2 Features and be...

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BLC8G27LS-240AV Power LDMOS transistor - Ampleon

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