DatasheetsPDF.com

BLC9G15XS-400AVT

Ampleon
Part Number BLC9G15XS-400AVT
Manufacturer Ampleon
Description Power LDMOS transistor
Published Apr 26, 2018
Detailed Description BLC9G15XS-400AVT Power LDMOS transistor Rev. 1 — 24 November 2017 Product data sheet 1. Product profile 1.1 General d...
Datasheet PDF File BLC9G15XS-400AVT PDF File

BLC9G15XS-400AVT
BLC9G15XS-400AVT

Overview
BLC9G15XS-400AVT Power LDMOS transistor Rev.
1 — 24 November 2017 Product data sheet 1.
Product profile 1.
1 General description 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1452 MHz to 1511 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.
VDS = 32 V; IDq = 810 mA (main); VGS(amp)peak = 0.
5 V, unless otherwise specified.
Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 1452 to 1511 32 93 16 47.
6 34 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.
6 dB at 0.
01 % probability on CCDF.
1.
2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing excellent digital pre-...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)