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BLF7G10LS-250

Part Number	BLF7G10LS-250
Manufacturer	Ampleon
Description	Power LDMOS transistor
Published	Apr 26, 2018
Detailed Description	BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev. 6 — 7 November 2016 Product data sheet 1. Product profile 1.1...
Datasheet	BLF7G10LS-250 PDF File

Overview

BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev.
6 — 7 November 2016 Product data sheet 1.
Product profile 1.
1 General description 250 W LDMOS power transistor for base station applications at frequencies from 869 MHz to 960 MHz.
Table 1.
Typical performance Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing = 5 MHz.
Typical RF performance at Tcase = 25 C.
Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 869 to 894 [1] 1800 30 60 19.
5 27.
4 35.
6 2-carrier W-CDMA 920 to 960 [2] 1800 30 60 19.
5 30.
5 34 [1] In a common source class-AB application test circuit.
...

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BLF7G10LS-250 Power LDMOS transistor - Ampleon

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