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BLF8G09LS-400PGW

Ampleon
Part Number BLF8G09LS-400PGW
Manufacturer Ampleon
Description Power LDMOS transistor
Published Apr 26, 2018
Detailed Description BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profi...
Datasheet PDF File BLF8G09LS-400PGW PDF File

BLF8G09LS-400PGW
BLF8G09LS-400PGW

Overview
BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev.
5 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.
Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 716 to 728 3400 28 95 20.
6 30 35 [1] [1] 3GPP test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF; 10 MHz carrier spacing.
1.
2 Features and benefits  Excellent ruggedness  Device can operate with the supply current delivered through the video leads  High efficiency  Low thermal resistance providing excellent thermal stability  Designed for broadband operation  Lower output capacitance for improved performance in Doherty applications  Decouplin...


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