DatasheetsPDF.com

BLF8G27LS-100GV

Part Number	BLF8G27LS-100GV
Manufacturer	Ampleon
Description	Power LDMOS transistor
Published	Apr 26, 2018
Detailed Description	BLF8G27LS-100V; BLF8G27LS-100GV Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile...
Datasheet	BLF8G27LS-100GV PDF File

Overview

BLF8G27LS-100V; BLF8G27LS-100GV Power LDMOS transistor Rev.
5 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2500 to 2700 900 28 25 17 28 32 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.
2 dB at 0.
01 % probability on CCDF per carrier; 5 MHz carrier spacing.
1.
2 Features and benefits  Exc...

Similar Datasheet

BLF8G27LS-100 Power LDMOS transistor - Ampleon
BLF8G27LS-100GV Power LDMOS transistor - Ampleon
BLF8G27LS-100V Power LDMOS transistor - Ampleon

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)