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BFG135A

Infineon Technologies AG
Part Number BFG135A
Manufacturer Infineon Technologies AG
Description NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BFG 135A NPN Silicon RF Transistor  For low-distortion broadband amplifier 4 stages in antenna and telecommunication ...
Datasheet PDF File BFG135A PDF File

BFG135A
BFG135A

Overview
BFG 135A NPN Silicon RF Transistor  For low-distortion broadband amplifier 4 stages in antenna and telecommunication systems up to 2 GHz at collector currents from 70 mA to 130 mA  Power amplifiers for DECT and PCN systems  Integrated emitter ballast resistor  fT = 6 GHz 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFG 135A Maximum Ratings Parameter Marking BFG135A 1=E Pin Configuration 2=B 3=E 4=C Package SOT-223 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 15 25 25 2 150 20 1 150 -65 .
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150 -65 .
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150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS  100 °C F) Junction temperature Ambient temperature Storage temperature mA W °C Thermal Resistance Junction - soldering point RthJS  50 K/W 1T is measured on the collector lead at the soldering point to the pcb S 1 Oct-26-1999 BFG 135A Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 100 mA, VCE = 8 V hFE 80 120 250 IEBO 1 µA ICBO 50 nA ICES 100 µA V(BR)CEO 15 V Symbol min.
Values typ.
max.
Unit 2 Oct-26-1999 BFG 135A Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol Values Parameter min.
AC characteristics (verified by random sampling) Transition frequency IC = 100 mA, VCE = 8 V, f = 200 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.
5 V, f = 1 MHz Noise figure IC = 30 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.
8 GHz Power gain, maximum available F) IC = 100 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.
8 GHz IC = 100...


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