DatasheetsPDF.com

BFG505W

NXP
Part Number BFG505W
Manufacturer NXP
Description NPN 9 GHz wideband transistors
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D123 BFG505W; BFG505W/X NPN 9 GHz wideband transistors Product sp...
Datasheet PDF File BFG505W PDF File

BFG505W
BFG505W


Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D123 BFG505W; BFG505W/X NPN 9 GHz wideband transistors Product specification Supersedes data of August 1995 1998 Oct 02 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505W; BFG505W/X FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability.
APPLICATIONS RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.
), radar detectors, pagers, satellite television tuners (SATV).
PINNING DESCRIPTION PIN BFG505W 1 2 3 4 collector base emitter emitter BFG505W/X collector emitter base emitter handbook, halfpage 4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.
1 2 MBK523 MARKING TYPE NUMBER BFG505W BFG505W/X QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM |S21|2 F PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain noise figure Ts ≤ 85 °C IC = 5 mA; VCE = 6 V IC = 0; VCB = 6 V; f = 1 MHz open emitter collector-emitter voltage RBE = 0 CONDITIONS CODE N0 N1 Top view Fig.
1 Simplified outline SOT343N.
MIN.
− − − − 60 − − − 15 − TYP.
MAX.
UNIT − − − − 120 0.
2 9 19 12 16 1.
9 20 15 18 500 250 − − − − − − pF GHz dB dB dB dB V V mA mW IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 1.
25 mA; VCE = 6 V; f = 2 GHz 1998 Oct 02 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505W; BFG505W/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj Note 1.
Ts is the temperature at the soldering ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)