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BFG520W

NXP
Part Number BFG520W
Manufacturer NXP
Description NPN 9 GHz wideband transistors
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D123 BFG520W; BFG520W/X NPN 9 GHz wideband transistors Product sp...
Datasheet PDF File BFG520W PDF File

BFG520W
BFG520W

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D123 BFG520W; BFG520W/X NPN 9 GHz wideband transistors Product specification Supersedes data of August 1995 1998 Oct 02 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability.
APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.
), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems.
PINNING DESCRIPTION PIN BFG250W 1 2 3 4 collector base emitter emitter BFG250W/X collector emitter base emitter handbook, halfpage 4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.
1 2 MBK523 MARKING TYPE NUMBER BFG520W BFG520W/X QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM |S21|2 F PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain noise figure Ts ≤ 85 °C IC = 20 mA; VCE = 6 V IC = 0; VCB = 6 V; f = 1 MHz open emitter collector-emitter voltage RBE = 0 CONDITIONS CODE N3 N4 Top view Fig.
1 Simplified outline SOT343N.
MIN.
− − − − 60 − − TYP.
MAX.
UNIT − − − − 120 0.
35 9 17 17 1.
1 20 15 70 500 250 − − − − 1.
6 pF GHz dB dB dB V V mA mW IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C 16 Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 900 MHz − 1998 Oct 02 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj Note 1.
Ts is the temperature at the s...


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