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2SC2883

GME
Part Number 2SC2883
Manufacturer GME
Description NPN Silicon Transistor
Published May 10, 2018
Detailed Description NPN Silicon Epitaxial Planar Transistor FEATURES  Suitable for output stage of 3 watts amplifier.  Small flat package...
Datasheet PDF File 2SC2883 PDF File

2SC2883
2SC2883



Overview
NPN Silicon Epitaxial Planar Transistor FEATURES  Suitable for output stage of 3 watts amplifier.
 Small flat package.
 PC=1.
0 to 2.
0W.
 Complements the 2SA1203.
Pb Lead-free Production specification 2SC2883 ORDERING INFORMATION Type No.
Marking 2SC2883 GO/GY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEO Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 1.
5 IB Base Current 0.
3 PC Collector Dissipation 500 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A A mW ℃ E051 Rev.
A www.
gmesemi.
com 1 Production specification NPN Silicon Epitaxial Planar Transistor 2SC2883 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IC=10mA,IB=0 IE=1mA,IC=...



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