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BFP193TW

Vishay Telefunken
Part Number BFP193TW
Manufacturer Vishay Telefunken
Description Silicon NPN Planar RF Transistor
Published Mar 23, 2005
Detailed Description BFP193T/BFP193TW/BFP193TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe p...
Datasheet PDF File BFP193TW PDF File

BFP193TW
BFP193TW

Overview
BFP193T/BFP193TW/BFP193TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device.
Observe precautions for handling.
Applications For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband amplifiers.
Features D Low noise figure D High transition frequency fT = 8 GHz D Excellent large signal behaviour 2 1 1 2 13 653 13 566 13 654 13 566 3 4 4 3 BFP193TW Marking: W19 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter BFP193TRW Marking: W91 Plastic case (SOT 343R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 2 1 94 9279 13 579 3 4 BFP193T Marking: 193 Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Document Number 85015 Rev.
1, 20-Jan-99 www.
vishay.
de • FaxBack +1-408-970-5600 1 (6) BFP193T/BFP193TW/BFP193TRW Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 12 2 80 420 150 –65 to +150 Unit V V V mA mW °C °C Tamb ≤ 45 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.
5) mm3 plated with 35mm Cu Symbol RthJA Value 250 Unit K/W www.
vishay.
de • FaxBack +1-408-970-5600 2 (6) Document Number 85015 Rev.
1, 20-Jan-99 BFP193T/BFP193TW/BFP193TRW Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 20 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 50 mA, IB =5 mA VCE = 8 V, IC = 30 mA Symb...


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