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BFP196W

Part Number	BFP196W
Manufacturer	Siemens Semiconductor Group
Description	NPN Silicon RF Transistor
Published	Mar 23, 2005
Detailed Description	BFP 196W NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunication...
Datasheet	BFP196W PDF File

Overview

BFP 196W NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.
5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.
5GHz F = 1.
5 dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 196W RIs Q62702-F1576 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 100 12 mW 700 150 - 65 .
.
.
+ 150 - 65 .
.
.
+ 150 ≤ 115 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 69 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group 1 Dec-12-1996 BFP 196W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 50 mA, VCE = 8 V Semiconductor Group 2 Dec-12-1996 BFP 196W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol min.
AC Characteristics Transition frequency Values typ.
max.
Unit fT 5 7.
5 1 0.
36 3.
7 - GHz pF 1.
4 dB 1.
5 2.
5 - IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.
5 V, f = 1 MHz Noise figure F IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.
8 GHz Power gain 2...

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