DatasheetsPDF.com

BFP196W

Part Number	BFP196W
Manufacturer	Infineon Technologies AG
Description	Low Noise Silicon Bipolar RF Transistor
Published	Mar 23, 2005
Detailed Description	Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunic...
Datasheet	BFP196W PDF File

Overview

Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.
5 GHz at collector currents from 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.
5 GHz, NFmin = 1.
3 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available BFP196W 3 4 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP196W Marking Pin Configuration RIs 1 = E 2 = C 3 = E 4 = B - - Package SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 69°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TA TStg Value 12 20 20 2 150 15 700 150 -65 .
.
.
150 -65 .
.
.
150 Unit V mA mW °C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 115 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-04 BFP196W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 50 mA, VCE = 8 V, pulse measured V(BR)CEO 12 - -V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 70 100 140 - 2 2014-04-04 BFP196W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min.
typ.
max.
AC Characteristics (verified by random sampling) Transition frequency...

Similar Datasheet

BFP193 NPN Silicon RF Transistor - Siemens Semiconductor Group
BFP193 Low Noise Silicon Bipolar RF Transistor - Infineon Technologies AG
BFP193T Silicon NPN Planar RF Transistor - Vishay Telefunken
BFP193TRW Silicon NPN Planar RF Transistor - Vishay Telefunken
BFP193TW Silicon NPN Planar RF Transistor - Vishay Telefunken
BFP193W NPN Silicon RF Transistor - Siemens Semiconductor Group
BFP193W Low Noise Silicon Bipolar RF Transistor - Infineon Technologies AG
BFP194 PNP Silicon RF Transistor - Infineon
BFP194 PNP Silicon RF Transistor - Siemens Semiconductor Group
BFP196 NPN Silicon RF Transistor - Siemens Semiconductor Group

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)