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BFP540F

Infineon Technologies AG
Part Number BFP540F
Manufacturer Infineon Technologies AG
Description NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BFP540F NPN Silicon RF Transistor • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 20 dB Noise Figu...
Datasheet PDF File BFP540F PDF File

BFP540F
BFP540F

Overview
BFP540F NPN Silicon RF Transistor • For highest gain low noise amplifier at 1.
8 GHz • Outstanding Gms = 20 dB Noise Figure F = 0.
9 dB • Gold metallization for high reliability • SIEGET to p v ie w 4 3 3 4 XYs 2 1 TSFP-4 45 - Line A T s 1 2 d ir e c tio n o f u n r e e lin g ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP540F Marking ATs* 1=B Pin Configuration 2=E 3=C 4=E - Package TSFP-4 * Pin configuration fixed relative to marking (see package picture) Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 80°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 2) Symbol RthJS Value ≤ 280 Unit K/W Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA T stg Value 4.
5 14 14 1 80 8 250 150 -65 .
.
.
150 -65 .
.
.
150 mW °C mA Unit V 1T is measured on the collec...


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