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EM47EM3288SBA

Eorex
Part Number EM47EM3288SBA
Manufacturer Eorex
Description 8Gb (32M x 8Bank x 32) Double DATA RATE 3 Stack SDRAM
Published May 16, 2018
Detailed Description Revision History Revision 0.1 (May. 2012) -First release. Revision 0.2 (Feb. 2013) -Update ZQ pins description. Revision...
Datasheet PDF File EM47EM3288SBA PDF File

EM47EM3288SBA
EM47EM3288SBA


Overview
Revision History Revision 0.
1 (May.
2012) -First release.
Revision 0.
2 (Feb.
2013) -Update ZQ pins description.
Revision 0.
3 (Apr.
2014) -Update tFAW.
EM47EM3288SBA Apr.
2014 1/39 www.
eorex.
com EM47EM3288SBA 8Gb (32M×8Bank×32) Double DATA RATE 3 Stack SDRAM Features • JEDEC Standard VDD/VDDQ = 1.
5V±0.
075V.
• All inputs and outputs are compatible with SSTL_15 interface.
• Fully differential clock inputs (CK, /CK) operation.
• Eight Banks • Posted CAS by programmable additive latency • Bust length: 4 with Burst Chop (BC) and 8.
• CAS Write Latency (CWL): 5,6,7,8 • CAS Latency (CL): 5,6,7,8,9,10 • Write Latency (WL) =Read Latency (RL) -1.
• Bi-directional Differential Data Strobe (DQS).
• Data inputs on DQS centers when write.
• Data outputs on DQS, /DQS edges when read.
• On chip DLL align DQ, DQS and /DQS transition with CK transition.
• DM mask write data-in at the both rising and falling edges of the data strobe.
• Sequential & Interleaved Burst ...



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