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PXT8550

Part Number	PXT8550
Manufacturer	DC COMPONENTS
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Published	May 17, 2018
Detailed Description	DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS PXT8550 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR ...
Datasheet	PXT8550 PDF File

Overview

DC COMPONENTS CO.
, LTD.
R DISCRETE SEMICONDUCTORS PXT8550 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications.
Pinning 1 = Base 2 = Collector 3 = Emitter .
066(1.
70) .
059(1.
50) SOT-89 .
063(1.
60) .
055(1.
40) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -40 -25 -5 -1500 300 +150 -55 to +150 Unit V V V mA mW oC oC .
167(4.
25) .
159(4.
05) .
102(2.
60) .
095(2.
40) 123 .
020(0.
51) .
014(0.
36) .
060(1.
52) .
058(1.
48) .
120(3.
04) .
117(2.
96) .
181(4.
60) .
173(4.
40) .
016(0.
41) .
014(0.
35) Dimensions in inches and (millimeters) E(Rlaeticntgrsicaat 2l5CoChaamrabicentet treimstpiecrsature unless otherwise specified) Characteristic Symbol Min Typ Collector-Base Breakdown Volatge BVCBO -40 - Collector-Emitter Breakdown Volt...

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