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BL10N80F

GME
Part Number BL10N80F
Manufacturer GME
Description N-Channel Power MOSFET
Published May 18, 2018
Detailed Description 10A,800V N-Channel Power Mosfet FEATURES  RDS(ON) =1.1Ω@ VGS = 10V  Ultra Low Gate Charge ( Typical 45 nC ) Pb Lead...
Datasheet PDF File BL10N80F PDF File

BL10N80F
BL10N80F

Overview
10A,800V N-Channel Power Mosfet FEATURES  RDS(ON) =1.
1Ω@ VGS = 10V  Ultra Low Gate Charge ( Typical 45 nC ) Pb Lead-free  Low Reverse Transfer Capacitance ( CRSS = Typical 15 pF )  Fast Switching Capability  Avalanche Energy Specified  Improved dv/dt Capability, High Ruggedness Production specification BL10N80F ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM EAS EAR dv/dt Gate -Source voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt PD Power Dissipation θJA Junction to Ambient θJC Junction to Case TJ Junction Temperature T...


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