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BL15N30F

GME
Part Number BL15N30F
Manufacturer GME
Description N-Channel Power MOSFET
Published May 18, 2018
Detailed Description N-Channel Power MOSFET FEATURES  RDS(on) = 240 m　 (Typ.) @ VGS = 10 V, ID = 7.5 A  Low Gate Charge (Typ. 28 nC)  Low...
Datasheet PDF File BL15N30F PDF File

BL15N30F
BL15N30F

Overview
N-Channel Power MOSFET FEATURES  RDS(on) = 240 m　 (Typ.
) @ VGS = 10 V, ID = 7.
5 A  Low Gate Charge (Typ.
28 nC)  Low Crss (Typ.
17 pF)  100% Avalanche Tested  Improved dv/dt Capability  RoHS Compliant APPLICATIONS  Lighting  Uninterruptible Power Supply MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter VDS Drain-Source Voltage VGS ID IDM EAS EAR IAR dv/dt PD Gate -Source Voltage Drain Current Continuous at TC=25℃ Continuous at TC=100℃ Drain Current(pulsed)Note1 Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Avalanche Current (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation TC=25℃ Derate above 25°C RθJA RθJC Tj Tstg Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Junction and StorageTemperature Range S059 Rev.
A Production specification BL15N30F ITO-220AB Value 300 Unit V ±30 15 9 60 V A A 731 mJ 17 mJ 15 A 15 V/ns 170 W 1.
45 W/℃ 62.
5 ...


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