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BL8N40F

GME
Part Number BL8N40F
Manufacturer GME
Description N-Channel Power Mosfet
Published May 18, 2018
Detailed Description Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =1.2Ω@VGS = 10V. Pb ...
Datasheet PDF File BL8N40F PDF File

BL8N40F
BL8N40F

Overview
Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =1.
2Ω@VGS = 10V.
Pb  Ultra Low gate charge (typical 28nC) Lead-free  Low reverse transfer capacitance (CRSS = typical 12.
0 pF)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness BL8N40F ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDS Drain-Source voltage VGS Gate -Source voltage 400 ±30 ID Continuous Drain current TC=25℃ 8 EAS Single Pulse Avalanche Energy(Note2) 320 EAR Avalanche Energy,Repetitive(Note1) 2.
5 Power Dissipation 39 PD Derate above 25°C 0.
312 Units V V A mJ mJ W W/...


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