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BL8N60F

Part Number	BL8N60F
Manufacturer	GME
Description	N-Channel Power Mosfet
Published	May 18, 2018
Detailed Description	Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =1.2Ω@VGS = 10V. Pb ...
Datasheet	BL8N60F PDF File

Overview

Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =1.
2Ω@VGS = 10V.
Pb  Ultra Low gate charge (typical 28nC) Lead-free  Low reverse transfer capacitance (CRSS = typical 12.
0 pF)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness BL8N60F ITO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDS Drain-Source voltage 600 V VGS Gate -Source voltage ±30 V Continuous Drain current TC=25℃ 7.
5 A ID Continuous Drain current TC=100℃ 4.
6 A EAS Single Pulse Avalanche Energy(Note2) 230 mJ EAR Avalanche Energy,Repeti...

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