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BL9N20

GME
Part Number BL9N20
Manufacturer GME
Description N-Channel Power Mosfet
Published May 18, 2018
Detailed Description Production specification N-Channel Enhancement Mode Field Effect Transistor BL9N20 FEATURES  TrenchFET Power MOSFETS....
Datasheet PDF File BL9N20 PDF File

BL9N20
BL9N20

Overview
Production specification N-Channel Enhancement Mode Field Effect Transistor BL9N20 FEATURES  TrenchFET Power MOSFETS.
 175℃ Junction Temperature.
 New Low Thermal Resistance Package.
Pb Lead-free TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value VDS Drain-Source Voltage 200 VGS Gate -Source Voltage ±20 ID Continuous Drain Current(TJ=175℃) TC=25℃ TC=125℃ 9 5.
2 IDM Pulsed Drain Current IAR Avalanche Current 10 7 PD Power Dissipation at TC=25℃ TA=25℃(Note1) EAS RthJA Single Pulse Avalanche Energy L = 0.
1 Mh(Note2) Junction-to-Ambient (PCB Mount)c RthJC Junction-to-Case (Drain) Tj Tstg Operating Junction and StorageTem-perature Range Note:1.
When mounted on 1“ square PCB(FR-4 material) 2.
Duty cycle≤1%.
60 3.
75 2.
45 40 2.
5 -55 to +175 Unit V V A A A W mJ ℃/W ℃/W ℃ X074 Rev.
A www.
gmesemi.
com 1 Production specification N-Channel Enhancement Mode Field Effect Transistor B...


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