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BCR101

Infineon Technologies AG
Part Number BCR101
Manufacturer Infineon Technologies AG
Description NPN Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description BCR101... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bia...
Datasheet PDF File BCR101 PDF File

BCR101
BCR101


Overview
BCR101.
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NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 100kΩ , R2 = 100kΩ ) BCR101F/L3 BCR101T C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration Package BCR101F* BCR101L3* BCR101T* *Preliminary Maximum Ratings Parameter UCs UC UCs 1=B 1=B 1=B 2=E 2=E 2=E 3=C 3=C 3=C - - - TSFP-3 TSLP-3-4 SC75 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 50 50 250 250 250 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR101F, TS ≤ 128°C BCR101L3, TS ≤ 135°C BCR101T, TS ≤ 109°C Junction temperature Storage temperature 1 mA mW Tj Tstg 150 -65 .
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150 °C Nov-27-2003 BCR101.
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Thermal Resistance Parameter Junction - soldering point1) BCR101F BCR101L3 BCR101T Symbol RthJS Value ≤ 90 ≤ 60 ≤ 165 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 70 0.
5 1 70 0.
9 - 100 1 100 3 100 75 0.
3 1.
8 3 130 1.
1 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA µA V Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain2) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage2) IC = 5 mA, IB = 0.
25 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 1 mA, VCE = 0.
3 V Input resistor Resistor ratio AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz MHz pF fT Ccb 1For calculation of R thJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300µs; D < 2% 2 Nov-27-2003 BCR101.
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DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) 10 3 Collector-emitter saturation voltage VCEs...



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