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BCR114

Infineon Technologies AG
Part Number BCR114
Manufacturer Infineon Technologies AG
Description NPN Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description BCR114... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bia...
Datasheet PDF File BCR114 PDF File

BCR114
BCR114

Overview
BCR114.
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NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 =4.
7kΩ, R2 =10kΩ) BCR114/F BCR114L3/T C 3 R1 R2 1 B 2 E EHA07184 Type BCR114 BCR114F BCR114L3 BCR114T Marking U4s U4s U4 U4s 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E Pin Configuration 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 1 Aug-29-2003 BCR114.
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Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR114, TS ≤ 102°C BCR114F, TS ≤ 128°C BCR114L3, TS ≤ 135°C BCR114T, TS ≤ 109°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BCR114 BCR114F BCR114L3 BCR114T 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 15 100 200 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 .
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150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 °C Unit K/W 2 Aug-29-2003 BCR114.
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Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 30 0.
5 0.
5 3.
2 0.
42 - 4.
7 0.
47 160 3 100 520 0.
3 1.
1 1.
4 6.
2 0.
52 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA µA V Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.
5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.
3 V Input resistor Resistor ratio AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz MHz pF fT Ccb Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 3 Aug-29-2003 BCR114.
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DC current gain hFE = ƒ(IC) VCE = 5 V (common em...


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