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BCR116

Siemens Semiconductor Group
Part Number BCR116
Manufacturer Siemens Semiconductor Group
Description NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)
Published Mar 23, 2005
Detailed Description BCR 116 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias ...
Datasheet PDF File BCR116 PDF File

BCR116
BCR116

Overview
BCR 116 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.
7kΩ, R2=47kΩ) Type BCR 116 Marking Ordering Code WGs Q62702-C2337 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102°C Junction temperature Storage temperature Symbol Values 50 50 5 15 100 200 150 - 65 .
.
.
+ 150 mA mW °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS ≤ 350 ≤ 240 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.
5mm / 6cm2 Cu Semiconductor Group 1 Dec-18-1996 BCR 116 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit V(BR)CEO 50 4.
7 0.
1 - V IC = 100 µA, IB = 0 Collector-base br...


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