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BCR129

Infineon Technologies AG
Part Number BCR129
Manufacturer Infineon Technologies AG
Description NPN Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description BCR129.../SEMH4 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built ...
Datasheet PDF File BCR129 PDF File

BCR129
BCR129

Overview
BCR129.
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/SEMH4 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR129/F/L3 BCR129T/W C 3 BCR129S SEMH4 C1 6 B2 5 E2 4 R1 R1 TR1 R1 TR2 1 B 2 E EHA07264 1 E1 2 B1 3 C2 EHA07265 Type BCR129 BCR129F BCR129L3 BCR129S BCR129T BCR129W SEMH4 Marking WVs WVs WV WVs WVs WVs WV 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 1 May-17-2004 BCR129.
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/SEMH4 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR129, TS ≤ 102°C BCR129F, TS ≤ 128°C BCR129L3, TS ≤ 135°C BCR129S, T S ≤ 115°C BCR129T, TS ≤ 109°C BCR129W, TS ≤ 124°C SEMH4, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR129 BCR129F BCR129L3 BCR129S BCR129T BCR129W SEMH4 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 20 100 200 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 .
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150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 105 ≤ 300 °C Unit K/W 2 May-17-2004 BCR129.
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/SEMH4 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO V(BR)EBO I CBO h FE VCEsat Vi(off) Vi(on) R1 50 5 120 0.
4 0.
5 7 10 100 630 0.
3 1 1.
1 13 kΩ Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 40 V, IE = 0 nA V DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1...


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