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BCR133U

Infineon Technologies AG
Part Number BCR133U
Manufacturer Infineon Technologies AG
Description NPN Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description BCR133.../SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Bui...
Datasheet PDF File BCR133U PDF File

BCR133U
BCR133U

Overview
BCR133.
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/SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR133/F/L3 BCR133T/W C 3 BCR133S/U SEMH11 C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07184 1 E1 2 B1 3 C2 EHA07174 Type BCR133 BCR133F BCR133L3 BCR133S BCR133T BCR133U BCR133W SEMH11 Marking WCs WCs WC WCs WCs WCs WC WC 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 1 Jun-14-2004 BCR133.
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/SEMH11 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR133, TS ≤ 102°C BCR133F, TS ≤ 128°C BCR133L3, TS ≤ 135°C BCR133S, T S ≤ 115°C BCR133T, TS ≤ 109°C BCR133U, TS ≤ 118°C BCR133W, TS ≤ 124°C SEMH11, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR133 BCR133F BCR133L3 BCR133S BCR133T BCR133U BCR133W SEMH11 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 20 100 200 250 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 .
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150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 133 ≤ 105 ≤ 300 °C Unit K/W 2 Jun-14-2004 BCR133.
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/SEMH11 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 , IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 30 0.
8 1 7 0.
9 10 1 100 0.
75 0.
3 1.
5 2.
5 13 1.
1 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA mA...


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