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BCR141F

Infineon Technologies AG
Part Number BCR141F
Manufacturer Infineon Technologies AG
Description NPN Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description BCR141.../SEMH1 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built ...
Datasheet PDF File BCR141F PDF File

BCR141F
BCR141F

Overview
BCR141.
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/SEMH1 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR141/F/L3 BCR141T/W C 3 BCR141S/U SEMH1 C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07184 1 E1 2 B1 3 C2 EHA07174 Type BCR141 BCR141F BCR141L3 BCR141S BCR141T BCR141U BCR141W SEMH1 Marking WDs WDs WD WDs WDs WDs WDs WD 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 1 Jun-14-2004 BCR141.
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/SEMH1 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR141, TS ≤ 102°C BCR141F, TS ≤ 128°C BCR141L3, TS ≤ 135°C BCR141S, T S ≤ 115°C BCR141T, TS ≤ 109°C BCR141U, TS ≤ 118°C BCR141W, TS ≤ 124°C SEMH1, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR141 BCR141F BCR141L3 BCR141S BCR141T BCR141U BCR141W SEMH1 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 30 100 200 250 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 .
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150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 133 ≤ 105 ≤ 300 °C Unit K/W 2 Jun-14-2004 BCR141.
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/SEMH1 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Collector-base cutoff current VCB = 40 V, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 50 0.
8 1 15 0.
9 22 1 100 350 0.
3 1.
5 2.
5 29 1.
1 kΩ nA µA V Emitter-...


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