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BCR149F

Infineon Technologies AG
Part Number BCR149F
Manufacturer Infineon Technologies AG
Description NPN Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description BCR149... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bia...
Datasheet PDF File BCR149F PDF File

BCR149F
BCR149F

Overview
BCR149.
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NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 47kΩ) BCR149F/L3 BCR149T C 3 R1 1 B 2 E EHA07264 Type Marking Pin Configuration Package BCR149F* BCR149L3* BCR149T* * Preliminary Maximum Ratings Parameter UAs UA UAs 1=B 1=B 1=B 2=E 2=E 2=E 3=C 3=C 3=C - - - TSFP-3 TSLP-3-4 SC75 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 50 70 250 250 250 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR149F, TS ≤ 128°C BCR149L3, TS ≤ 135°C BCR149T, TS ≤ 109°C Junction temperature Storage temperature 1 mA mW Tj Tstg 150 -65 .
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150 °C Nov-04-2003 BCR149.
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Thermal Resistance Parameter Junction - soldering point1) BCR149F BCR149L3 BCR149T Symbol RthJS Value ≤ 90 ≤ 60 ≤ 165 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO V(BR)EBO I CBO h FE VCEsat Vi(off) Vi(on) R1 50 5 120 0.
4 0.
5 32 - 47 150 3 100 630 0.
3 0.
8 1.
5 62 kΩ Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 40 V, IE = 0 nA V DC current gain2) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage2) IC = 10 mA, IB = 0.
5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.
3 V Input resistor AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz fT Ccb MHz pF 1For calculation of R thJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300µs; D < 2% 2 Nov-04-2003 BCR149.
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DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) 10 3 Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 -1 A h FE 10 -...


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