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HY5012W

HOOYI
Part Number HY5012W
Manufacturer HOOYI
Description N-Channel Enhancement Mode MOSFET
Published May 23, 2018
Detailed Description HY5012W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Dr...
Datasheet PDF File HY5012W PDF File

HY5012W
HY5012W

Overview
HY5012W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 125 ±25 175 55 to 175 300 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 1100** 300 196 500 250 0.
3 40 EAS Avalanche Energy, Single Pulsed L=0.
5mH 2000*** Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=100V Electrical Characteristics (T C = 25°C Unless Otherwise Noted) Unit V °C °C A A A W °C/W mJ Symbol Parameter Test Conditions HY5012 Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Bre...


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