DatasheetsPDF.com

BCR162L3

Infineon Technologies AG
Part Number BCR162L3
Manufacturer Infineon Technologies AG
Description PNP Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description BCR162... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bia...
Datasheet PDF File BCR162L3 PDF File

BCR162L3
BCR162L3

Overview
BCR162.
.
.
PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.
7kΩ , R2 = 4.
7kΩ ) BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type BCR162 BCR162F BCR162L3 BCR162T Marking WUs WUs WU WUs 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E Pin Configuration 2=C 2=C 2=C 2=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 1 Aug-29-2003 BCR162.
.
.
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR162, TS ≤ 102°C BCR162F, TS ≤ 128°C BCR162L3, TS ≤ 135°C BCR162T, TS ≤ 109°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BCR162 BCR162F BCR162L3 BCR162T 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 15 100 200 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 .
.
.
150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 °C Unit K/W 2 Aug-29-2003 BCR162.
.
.
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 20 0.
8 1 3.
2 0.
9 - 4.
7 1 200 3 100 1.
61 0.
3 1.
5 2.
5 6.
2 1.
1 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA mA V Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.
5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.
3 V Input resistor Resistor ratio AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz MHz pF fT Ccb Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 3 Aug-29-2003 BCR162.
.
.
DC current gain hFE = ƒ(IC) VCE = 5 V (common e...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)