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BCR166F

Infineon Technologies AG
Part Number BCR166F
Manufacturer Infineon Technologies AG
Description PNP Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description BCR166.../SEMB13 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built...
Datasheet PDF File BCR166F PDF File

BCR166F
BCR166F

Overview
BCR166.
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/SEMB13 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.
7kΩ , R2 = 47kΩ ) BCR166/F/L3 BCR166T/W C 3 SEMB13 C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07183 1 E1 2 B1 3 C2 EHA07173 Type BCR166 BCR166F BCR166L3 BCR166T BCR166W SEMB13 Marking WTs WTs WT WTs WTs WB 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 1 Jun-14-2004 BCR166.
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/SEMB13 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR166, TS ≤ 102°C BCR166F, TS ≤ 128°C BCR166L3, TS ≤ 135°C BCR166T, TS ≤ 109°C BCR166W, TS ≤ 124°C SEMB13, T S ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR166 BCR166F BCR166L3 BCR166T BCR166W SEMB13 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 15 100 200 250 250 250 250 250 150 -65 .
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150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 105 ≤ 300 Unit V mA mW Tj Tstg Symbol RthJS °C Unit K/W 2 Jun-14-2004 BCR166.
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/SEMB13 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 70 0.
4 0.
5 3.
2 0.
09 - 4.
7 0.
1 160 3 100 155 0.
3 0.
8 1.
4 6.
2 0.
11 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA µA V Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.
5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.
3 V Input resistor Resistor...


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