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BCR191F

Infineon Technologies AG
Part Number BCR191F
Manufacturer Infineon Technologies AG
Description PNP Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description BCR191.../SEMB1 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built ...
Datasheet PDF File BCR191F PDF File

BCR191F
BCR191F


Overview
BCR191.
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/SEMB1 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 22kΩ , R2 = 22kΩ ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR191/F/L3 BCR191T/W C 3 BCR191S SEMB1 C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07183 1 E1 2 B1 3 C2 EHA07173 Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 BCR191S BCR191T BCR191W SEMB1 WOs WOs WO WOs WOs WOs WO 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - - - SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B2 3=C2 4=E2 5=B2 6=C1 SOT666 1 May-18-2004 BCR191.
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/SEMB1 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR191, TS ≤ 102°C BCR191F, TS ≤ 128°C BCR191L3, TS ≤ 135°C BCR191S, T S ≤ 115°C BCR191T, TS ≤ 109°C BCR191W, TS ≤ 124°C SEMB1, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR191 BCR191F BCR191L3 BCR191S BCR191T BCR191W SEMB1 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 30 100 200 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 150 .
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-65 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 105 ≤ 300 °C Unit K/W 2 May-18-2004 BCR191.
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/SEMB1 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 50 0,8 1 15 0,9 22 1 100 350 0,3 1,5 2,5 29 1,1 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA µA V Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA...


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