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BCR400R

Siemens Semiconductor Group
Part Number BCR400R
Manufacturer Siemens Semiconductor Group
Description Active Bias Controller
Published Mar 23, 2005
Detailed Description BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ...
Datasheet PDF File BCR400R PDF File

BCR400R
BCR400R

Overview
BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.
7V Application notes • Stabilizing bias current of NPN transistors and FETs from from less than 0.
2mA up to more than 200mA • Ideal supplement for SIEGET and other RF transistors • also usable as current source up to 5mA Type Marking Ordering Code Pin Configuration Package BCR 400R W4s Q62702-C2479 1 GND/ENPN 2 Contr/BNPN 3 VS 4 Rext/CNPN SOT-143R (ENPN,BNPN,CNPN are electrodes of a stabilized NPN transistor) Maximum Ratings Parameter Supply voltage Control current Control voltage Reverse voltage between all terminals Total power dissipation, TS = 83°C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Symbol Values 18 10 16 0.
5 330 150 - 65 .
.
.
+ 150 ≤ 280 ≤ 190 Unit V mA V mW °C VS IContr.
VContr.
VR Ptot Tj Tstg RthJA RthJS K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.
5mm / 6cm2 Cu Semiconductor Group 1 Nov-27-1996 BCR 400R Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC Characteristics Additional current consumption Values typ.
max.
Unit I0 20 0.
1 40 µA mA - VS = 3 V Lowest stabilizing current Imin VS = 3 V DC Characteristics with stabilized NPN-Transistors Lowest sufficient battery voltage VSmin 1.
6 0.
65 0.
08 0.
15 0.
2 - V IB (NPN) < 0.
5 mA Voltage drop (VS - VCE) Vdrop ∆ IC /IC ∆ IC /IC ∆ IC /IC %/K ∆VS/VS ∆hFE/hFE IC = 25 mA Change of IC versus hFE hFE > 50 Change of IC versus VS VS > 3 V Change of IC versus TA Semiconductor Group 2 Nov-27-1996 BCR 400R Collector current IC = f(hFE) IC and hFE refer to stabilized NPN Transistor Parameter Rext.
(Ω) 10 3 mA Collector Current IC = f(VS) of stabilized NPN Transistor Parameter Rext.
(Ω) 10 3 mA 2.
1 5.
9 12.
4 IC 10 2 5.
9 IC 10 2 10 1 67 10 1 67 10 0 760 10 0 760 4.
3k 10 -1 0 10 -1 0 50 100 150...


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