DatasheetsPDF.com

BCR410W

Infineon Technologies AG
Part Number BCR410W
Manufacturer Infineon Technologies AG
Description Active Bias Controller
Published Mar 23, 2005
Detailed Description BCR410W Active Bias Controller Characteristics  Supplies stable bias current from 1.8V operating 3 4 voltage on  Low...
Datasheet PDF File BCR410W PDF File

BCR410W
BCR410W



Overview
BCR410W Active Bias Controller Characteristics  Supplies stable bias current from 1.
8V operating 3 4 voltage on  Low voltage drop: 110mV for 10mA collector currrent Application notes  Stabilizing bias current of NPN transistors and 2 1 4 S e n s e 3 Io u t VPS05605 FET's from 100µA to 20mA  Ideal supplement for Sieget and other transistors + = V re f 1 V s 2 G N D Type BCR410W Maximum Ratings Parameter Supply voltage Output current Marking W8s 1= Vs Pin Configuration 2=GND 3=Iout 4=Sense Package SOT343 Symbol VS Iout Ptot Tj Tstg Value 18 0.
5 100 150 -65 .
.
.
150 Unit V mA mW °C Total power dissipation, TS = 110 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS  470 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Dec-21-2001 BCR410W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Additional current consumption VS = 3 V I0 200 400 µA Symbol min.
Values typ.
max.
Unit DC Characteristics with stabilized NPN-Transistors Lowest sufficient battery voltage Voltage drop IC = 10 mA Change of IC versus hFE hFE = 50 Change of IC versus VS VS = 3 V Change of IC versus TA VSmin Vdrop 1.
8 110 tbd 2 0.
15 V mV IC /IC IC /IC IC /IC hFE / hFE %/V %/K 2 Dec-21-2001 BCR410W Collector Current IC = f (VS) of stabilized NPN Transistor Parameter Rext.
() 10 2 Voltage drop Vdrop = f (IC ) 300 mV mA 240 15 Ohm 22 Ohm 47 Ohm 100 Ohm Vdrop 5.
5 10 1 Ic 10 Ohm 220 200 180 160 140 10 0 120 100 80 220 Ohm 470 Ohm 1000 Ohm 60 40 20 10 -1 2.
0 2.
5 3.
0 3.
5 4.
0 4.
5 V Vs 0 -1 10 10 0 10 1 mA 10 2 IC Collector current IC = f (Rext.
) of stabilized NPN Transistor 10 2 Total power dissipation Ptot = f (TS ) 120 mA mW Ic Ptot 2 3 10 1 80 60 10 0 40 20 10 -1 1 10 10 10 Ohm 10 4 Rext 0 0 20 40 60 80 100 120 °C 150 TS 3 Dec-21-2001 BCR410W Application Circuit: V s B C R 4 1 0 W...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)