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BCR553

Infineon Technologies AG
Part Number BCR553
Manufacturer Infineon Technologies AG
Description PNP Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description PNP Silicon Digital Transistor • Built in bias resistor (R1= 2.2 kΩ, R2= 2.2 kΩ) • Pb-free (RoHS compliant) package • Qu...
Datasheet PDF File BCR553 PDF File

BCR553
BCR553

Overview
PNP Silicon Digital Transistor • Built in bias resistor (R1= 2.
2 kΩ, R2= 2.
2 kΩ) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR553 32 1 C 3 R1 R2 1 B Type BCR553 2 E EHA07183 Marking XBs Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings Parameter Symbol Value Collector-emitter voltage Collector-base voltage Input forward voltage Input reverse voltage Collector current Total power dissipationTS ≤ 79 °C Junction temperature Storage temperature VCEO VCBO Vi(fwd) Vi(rev) IC Ptot Tj Tstg 50 50 20 10 500 330 150 -65 .
.
.
150 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2011-07-28 BCR553 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage V(BR...


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