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BCR583

Infineon Technologies AG
Part Number BCR583
Manufacturer Infineon Technologies AG
Description PNP Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description PNP Silicon Digital Transistor • Built in bias resistor (R1= 10 kΩ, R2= 10 kΩ) • Pb-free (RoHS compliant) package • Qual...
Datasheet PDF File BCR583 PDF File

BCR583
BCR583

Overview
PNP Silicon Digital Transistor • Built in bias resistor (R1= 10 kΩ, R2= 10 kΩ) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR583 32 1 C 3 R1 R2 1 B Type BCR583 2 E EHA07183 Marking XMs Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings Parameter Symbol Value Collector-emitter voltage Collector-base voltage Input forward voltage Input reverse voltage Collector current Total power dissipationTS ≤ 79 °C Junction temperature Storage temperature VCEO VCBO Vi(fwd) Vi(rev) IC Ptot Tj Tstg 50 50 50 10 500 330 150 -65 .
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150 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2011-07-28 BCR583 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage V(BR)C...


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