DatasheetsPDF.com

HMC637BPM5E

Analog Devices
Part Number HMC637BPM5E
Manufacturer Analog Devices
Description 1W Power Amplifier
Published Jun 2, 2018
Detailed Description Data Sheet GaAs, pHEMT, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E FEATURES P1dB out...
Datasheet PDF File HMC637BPM5E PDF File

HMC637BPM5E
HMC637BPM5E

Overview
Data Sheet GaAs, pHEMT, MMIC, Single Positive Supply, DC to 7.
5 GHz, 1 W Power Amplifier HMC637BPM5E FEATURES P1dB output power: 28 dBm typical Gain: 15.
5 dB typical Output IP3: 39 dBm typical Self biased at VDD = 12 V at 345 mA typical Optional bias control on VGG1 for IDQ adjustment Optional bias control on VGG2 for IP2 and IP3 optimization 50 Ω matched input/output 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2 APPLICATIONS Military and space Test instrumentation GENERAL DESCRIPTION The HMC637BPM5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), cascode distributed power amplifier.
The device is self biased in normal operation and features optional bias control for quiescent current (IDQ) adjustment and for second-order intercept (IP2) and third-order intercept (IP3) optimization.
The amplifier operates from dc to 7.
5 GHz, providing 15.
5 dB of small signal gain, 28 dBm output power at 1 dB gain c...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)