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NCE01H13WD

NCE Power Semiconductor
Part Number NCE01H13WD
Manufacturer NCE Power Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Jun 2, 2018
Detailed Description http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13WD uses advanced trench tech...
Datasheet PDF File NCE01H13WD PDF File

NCE01H13WD
NCE01H13WD

Overview
http://www.
ncepower.
com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13WD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Pb Free Product NCE01H13WD General Features ● VDS =100V,ID =130A RDS(ON) <6.
8mΩ @ VGS=10V (Typ:5.
2mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uni...


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