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NCE65T900I

NCE Power Semiconductor
Part Number NCE65T900I
Manufacturer NCE Power Semiconductor
Description N-Channel Super Junction Power MOSFET
Published Jun 3, 2018
Detailed Description NCE65T900I，NCE65T900K N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced t...
Datasheet PDF File NCE65T900I PDF File

NCE65T900I
NCE65T900I

Overview
NCE65T900I，NCE65T900K N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.
This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS RDS(ON)TYP.
ID 650 750 5 V mΩ A Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE65T900I TO-251 NCE65T900I NCE65T900K TO-252 NCE65T900K Table 1.
Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS...


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