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BCW70LT1

Motorola Inc
Part Number BCW70LT1
Manufacturer Motorola Inc
Description General Purpose Transistors
Published Mar 23, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW69LT1/D General Purpose Transistors PNP Silicon COLLE...
Datasheet PDF File BCW70LT1 PDF File

BCW70LT1
BCW70LT1

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW69LT1/D General Purpose Transistors PNP Silicon COLLECTOR 3 1 BASE BCW69LT1 BCW70LT1 3 1 2 EMITTER 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VEBO IC Value –45 –5.
0 –100 Unit Vdc Vdc mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING BCW69LT1 = H1; BCW70LT1 = H2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
8 RθJA PD 556 300 2.
4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –2.
0 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = –100 µAdc, VEB = 0) Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) Collector Cutoff Current (VCB = –20 Vdc, IE = 0) (VCB = –20 Vdc, IE = 0, TA = 100°C) 1.
FR–5 = 1.
0 x 0.
75 x 0.
062 in.
2.
Alumina = 0.
4 x 0.
3 x 0.
024 in.
99.
5% alumina V(BR)CEO V(BR)CES V(BR)EBO ICBO — — –100 –10 nAdc µAdc –45 –50 –5.
0 — — — Vdc Vdc Vdc Thermal Clad is a trademark of the Bergquist Company Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc.
1996 1 BCW69LT1 BCW70LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = –2.
0 mAdc, VCE = –5.
0 Vdc) hFE BCW69 BCW70 VCE(sat) VBE(on) 120 215 — –0.
6 260 500 –0.
3 –0.
75 Vdc Vdc — Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.
5 mAdc) Base–Emitter On Voltage (IC = –2.
0 mAdc, VCE = –5.
0 Vdc) SMALL–SIGNAL CHARACTERISTICS Output Capacitance (IE = 0, VCB = –10 Vdc, f = 1.
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