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CEC3833

CET
Part Number CEC3833
Manufacturer CET
Description N-Channel MOSFET
Published Jun 12, 2018
Detailed Description CEC3833 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 17A, RDS(ON) = 5.0mΩ @VGS = 10V....
Datasheet PDF File CEC3833 PDF File

CEC3833
CEC3833

Overview
CEC3833 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 17A, RDS(ON) = 5.
0mΩ @VGS = 10V.
RDS(ON) = 7.
2mΩ @VGS = 4.
5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D G S 5 67 8 Bottom View DFN3*3 4 321 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 17 IDM 68 Maximum Power Dissipation PD 2.
5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Units V V A A W C Thermal Characteristics Parameter Thermal Resistance...


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