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CEU12P15

CET
Part Number CEU12P15
Manufacturer CET
Description P-Channel MOSFET
Published Jun 12, 2018
Detailed Description CED12P15/CEU12P15 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -150V, -12A, RDS(ON) = 0.24...
Datasheet PDF File CEU12P15 PDF File

CEU12P15
CEU12P15

Overview
CED12P15/CEU12P15 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -150V, -12A, RDS(ON) = 0.
24Ω @VGS = -10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage(Typ) Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD -150 ±20 -12 -48 60 0.
48 Single Pulsed Avalanche Energy e EAS 250 Single Pulsed Avalanche Current e IAS 10 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.
1 50 Units V V A A W W/ C mJ A C Units C/W C/W This is pre...


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