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CEU06N7

CET
Part Number CEU06N7
Manufacturer CET
Description N-Channel MOSFET
Published Jun 12, 2018
Detailed Description CED06N7/CEU06N7 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 700V, 5A, RDS(ON) = 2Ω @VGS =...
Datasheet PDF File CEU06N7 PDF File

CEU06N7
CEU06N7

Overview
CED06N7/CEU06N7 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 700V, 5A, RDS(ON) = 2Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 700 VGS ±30 Drain Current-Continuous Drain Current-Pulsed a ID 5 IDM 20 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 107 0.
7 Single Pulsed Avalanche Energy e EAS 125 Single Pulsed Avalan...


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