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CED55A3

CET
Part Number CED55A3
Manufacturer CET
Description N-Channel MOSFET
Published Jun 12, 2018
Detailed Description CED55A3/CEU55A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 38A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON...
Datasheet PDF File CED55A3 PDF File

CED55A3
CED55A3

Overview
CED55A3/CEU55A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 38A, RDS(ON) = 14mΩ @VGS = 10V.
RDS(ON) = 24mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 25 ±20 38 152 31.
25 0.
25 Operating and Store Temperature Range TJ,Tstg -55 ...


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