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CED62A3

CET
Part Number CED62A3
Manufacturer CET
Description N-Channel MOSFET
Published Jun 12, 2018
Detailed Description CED62A3/CEU62A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 55A, RDS(ON) = 11.5mΩ @VGS = 10V. RDS(...
Datasheet PDF File CED62A3 PDF File

CED62A3
CED62A3

Overview
CED62A3/CEU62A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 55A, RDS(ON) = 11.
5mΩ @VGS = 10V.
RDS(ON) = 16mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 55 165 60 0.
4 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.
5 50 Units V V A A W W/ C C Units C/W C/W 2003.
February 6 - 102 http://www.
cetsemi.
com CED62A3/CEU62A3 Electrical Characteristics Tc = 25 C unl...


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