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CEV2309

CET
Part Number CEV2309
Manufacturer CET
Description P-Channel MOSFET
Published Jun 12, 2018
Detailed Description CEV2309 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -1.2A, RDS(ON) = 165mΩ @VGS = -...
Datasheet PDF File CEV2309 PDF File

CEV2309
CEV2309

Overview
CEV2309 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -1.
2A, RDS(ON) = 165mΩ @VGS = -4.
5V.
RDS(ON) = 300mΩ @VGS = -2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-323 package.
D DS G SOT-323(SC-70) G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS -20 VGS ±8 ID -1.
2 IDM -4.
8 Maximum Power Dissipation PD 0.
25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 375 Units V V A A W C Units C/W This is preliminary information on a new product in development now .
Details are subject to change without notice .
1 Rev 1.
2006.
Oct http://www.
cetsemi.
com CEV2309 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test ...


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