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CEP60N10V

CET
Part Number CEP60N10V
Manufacturer CET
Description N-Channel MOSFET
Published Jun 12, 2018
Detailed Description CEP60N10V/CEB60N10V N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 57A, RDS(ON) = 24mΩ...
Datasheet PDF File CEP60N10V PDF File

CEP60N10V
CEP60N10V

Overview
CEP60N10V/CEB60N10V N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 57A, RDS(ON) = 24mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 100 ±30 57 228 200 1.
3 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Curren...


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