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CEB8030LA

CET
Part Number CEB8030LA
Manufacturer CET
Description N-Channel MOSFET
Published Jun 12, 2018
Detailed Description CEP8030LA/CEB8030LA N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A,RDS(ON) = 6.5mΩ @VGS = 10V. R...
Datasheet PDF File CEB8030LA PDF File

CEB8030LA
CEB8030LA

Overview
CEP8030LA/CEB8030LA N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A,RDS(ON) = 6.
5mΩ @VGS = 10V.
RDS(ON) = 9.
0mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 75 225 75 0.
5 Operating and Store Temperature Range TJ,Tstg -55 to 1...


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